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Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences
Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences
2014
Isabella Rossetto
Fabiana Rampazzo
Simone Gerardin
Matteo Meneghini
Marta Bagatin
Alberto Zanandrea
A. Paccagnella
Gaudenzio Meneghesso
Enrico Zanoni
C. Dua
Marie-Antoinette di Forte-Poisson
R. Aubry
M. Oualli
Sylvain Delage
Keywords:
Electronic engineering
Materials science
Proton
Analytical chemistry
Degradation (geology)
Optoelectronics
Correction
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