Laser bars with trenches

The invention relates to a laser bar (1) having a semiconductor layer (11) having multiple layers and having an active zone (15), said active zone (15) is arranged in a xy-plane, said laser diodes (12) each in an x direction between two end surfaces forming a fashion space (4), wherein the mode areas (4) of the laser diodes (12) are arranged side by side in the y-direction, wherein between two mode chambers (4), a trench (3) in the semiconductor layer (11) is provided, wherein the trenches (3) in the x-direction extend, and wherein the trenches (3) from a top surface of the semiconductor layer (11) in the z-direction into the active region (15) extend.