In-situ synchrotron-radiation photoemission characterization of SrTiO3/La0.6Sr0.4MnO3 heterointerfaces

the STO capping layer may be due to the high chemical stability of TiO2 plane in the STO. These results suggest that the hole doped into the LSMO layer close to the heterointeface originates from the chemical carrier- concentration modulation at the valence-mismatched interface composed of the stacking sequence -TiO2-SrO- MnO2-La0.6Sr0.4-, which is proper to multilayers based on perovskite oxides (2).