Reflectivity of GaSb-AlSb quantum-well structures in the range 2-5 eV

We report reflectance spectra of two GaSb‐AlSb quantum‐well structures in the range 2–5 eV at different temperatures. In the region of the E1 and E1+Δ1 peaks, our experimental study shows that electronic properties can be related to strain and confinements effects in a type‐II heterostructure at the L point.