Plasma-assisted epitaxy of InAs layers on GaAs

Abstract InAs layers were epitaxially grown on (100) semi-insulating GaAs by plasma-assisted epitaxy (PAE) over a wide range of V/III supply ratio, where the epitaxial growth temperature could be reduced down to 300°C and the electrical properties could be remarkably improved compared with the growth without plasma. The V/III supply ratio should be more precisely controlled at a lower temperature, because the electrical properties of InAs layers grown at 300°C depend much more critically upon the supply ratio than those grown at 400°C.