Further improvements in decoupled methods for semiconductor device modeling

Two complementary techniques for accelerating the Gummel iterations are successfully combined to yield an efficient and robust, decoupled nonlinear solution method for semiconductor device simulation. The reasons for this success are explored. The effectiveness of the new method under high level injection, and its robustness in the presence of large time or bias steps should pave the way to its widespread application in multidimensional semiconductor device simulation. >