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Radiation Defects Created in n‐Type 4H‐SiC by Electron Irradiation in the Energy Range of 1 to 10 MeV
Radiation Defects Created in n‐Type 4H‐SiC by Electron Irradiation in the Energy Range of 1 to 10 MeV
2019
Pavel Hazdra
J. Vobecký
Keywords:
Condensed matter physics
Atomic physics
Silicon carbide
Radiation
Electron beam processing
Physics
Correction
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