Visible-blind ultraviolet photodetector based on p-Cu2CdSnS4/n-ZnS heterojunction with a type-I band alignment

A visible-blind ultraviolet photodetector based on a p-Cu2CdSnS4/n-ZnS (CCTS/ZnS) heterojunction was fabricated by the radio frequency magnetron sputtering technique. Mo and In metals were used as p-type and n-type contact electrodes, respectively. Current−voltage measurement of the CCTS/ZnS heterojunction photodetector showed a good rectifying behavior. The photodetector showed a peak photocurrent at 330 nm and a sharp photocurrent edge at about 380 nm, suggesting a typical visible-blind characteristic. X-ray photoelectron spectroscopy measurements and first-principles calculations indicate that the CCTS/ZnS heterojunction has a type-I band alignment. The conduction-band offset leads to the barrier that inhibits the drifting of photo-generated electrons from p-CCTS to n-ZnS layer, well interpreting the spectral response characteristics of the device.