Flexible low-voltage pentacene memory thin-film transistors with combustion-processable Al2O3 gate dielectric and Au nanoparticles

A Au nanoparticles (NPs) embedded pentacene thin-film transistor (TFT) with solution-based Al2O3 was fabricated on a polyethersulfone substrate. The TFT for low-voltage operation within ?3?V was realized with the Al2O3 dielectric film. By a combustion process for Al2O3, efficient driving of conversion reaction at low annealing temperature of 200??C can be achieved and the device can be made on a plastic substrate. And, the Au NPs were deposited by the contact printing method using the polydimethylsiloxane stamp. From the electrical characteristics of the devices, a saturation mobility value of 4.25?cm2?V?1?s?1, threshold voltage (Vth) of ?0.5?V, subthreshold swing of 70?mV?dec?1 and memory window of 0.21?V at ?3?V programming gate bias voltage were obtained.