The fabrication of metal–oxide–semiconductor transistors using cerium dioxide as a gate oxide material

Cerium dioxide was employed as a gate insulator for an enhancement‐type n‐channel metal–oxide–semiconductor (MOS) transistor. Cerium was evaporated in a tungsten boat and immediately oxidized for oxide uniformity. The use of CeO2 as a gate oxide in MOS transistor yielded a low positive threshold voltage with negligible interface charge effects. This resulted in the transistor performing as an enhancement type device.