Numerical simulation of thermal-physical processes accompanying multisilicon crystal growing by the method of Bridgman — Stockbarger

Conjugate heat transfer was studied numerically at multisilicon production from flat-bottom crucible using a vertical version of the Bridgman — Stockbarger method. The equations of convective heat transfer in the area occupied by melt, and heat-conductivity equations for the solid silicon body and crucible walls were solved, considering the heat of phase transition.