Investigating the potential of SiGe Diode in BiCMOS 55nm for power detection and datacom applications at 300 GHz

This paper describes millimeter wave (mmW) on-wafer continues wave (CW) power detection using dedicated high frequency diode junction, integrated on SiGe BiCMOS 55 nm technology from STMicroelectronics. This extraction was performed for two test structures configurations in order to evaluate the potential of this diode junction for power detection as well as for sub-Terahertz Transmission Link on 220 to 320 GHz Frequency Range. The power detection is performed by biasing the diode on its forward regime. That allows to obtain a voltage responsivity (γ) for variable bias current increasing from 1 nA to 5μA and exhibiting a corresponding y decreasing from 3000 V/W to 500 V/W at 320 GHz.