Enhancement in Electrical Characteristics of AlGaN/GaN HEMT Using Gate Engineered Dielectric Pocket Dual-Metal Gate

This study presents enhancement of AlGaN/GaN HEMT device electrical characteristics by employing different gate engineered architectures. The dual-metal gate (DMG) structure is combined in different forms with recessed AlGaN and gate dielectric (HfSiO4) in order to extract the advantages offered by the individuals. A remarkable improvement in transconductance (8%) and drain current (~13 & 7%) is achieved with dual-metal-gated HEMT as well as with the proposed dielectric pocket (DP) dual-metal-gated HEMT device. The increased OFF-state leakage with the incorporation of dual-metal gate is suppressed successfully with the implication of dielectric pocket dual-metal gate structure. Apart from this, DP-DMG HEMTs has a 0.15 V positive shift in the threshold voltage in comparison with conventional SMG-HEMT, and therefore, this dielectric pocket HEMT can be seen as an upgradation to the next generation of HEMT devices.