Large wavelength shifts in thin p-clad InGaAs QW lasers

Summary form only given. In our work with thin upper cladding layer InGaAs single quantum well (SQW) lasers, we have found that shifts of greater than 50 nm can be achieved by simply changing the type of metal used on the p-GaAs heavily doped contact layer adjacent to the thin p-clad layer. In this report, we describe how changes in optical mode loss are responsible for the large wavelength shifts observed.