An amorphous silicon solar cell having a conversion efficiency of 10.50 percent

We report on a hydrogenated amorphous silicon (a-Si:H) p-i-n solar cell having a conversion efficiency of 10.50 percent (1.05-cm 2 area). The cell was prepared by a conventional plasma-enhanced chemical vapor deposition process using a structure back electrode n-i-p/SnO 2 -ITO/glass. This conversion efficiency was obtained from the reduction and control of impurity levels in the i-layer. Photovoltaic characteristics of prepared cells were measured under AMI (100 mW/cm 2 ). The impurity levels of oxygen and boron were measured by SIMS and are discussed.