Design and fabrication of Schottky diodes in 1.2 µm CMOS process

The I–V curves for Schottky diodes with two different contact areas and geometries fabricated through 1.2 µm CMOS process are presented. These curves are described applying the analysis and practical layout design. It takes into account the resistance, capacitance and reverse breakdown voltage in the semiconductor structure and the dependence of these parameters to improve its operation. The described diodes are used for a charge pump circuit implementation.