Insulated gate bipolar transistor

The invention provides an insulated gate bipolar transistor (IGBT) which is high in short circuit tolerance, little in loss of gate drive circuit, and low in on-resistance. The IGBT includes a first base layer (7a) and a second base layer (7b) which are selectively formed on a first surface of a first semiconductor layer (2) between a first trench (3a) and a second trench (3b), wherein the first base layer (7a) is exposed from a side wall of the first trench (3a), and the second base layer (7b) is exposed from a side wall of the second trench (3b). A first emitter layer (8a) is selectively formed on the surface of the first base layer (7a), and is exposed from the side wall of the first trench (3a). A second emitter layer (8b) is selectively formed on the surface of the second base layer (7b), and is exposed from the side wall of the second trench (3b). A first gate electrode (5b) is provided via a first gate insulating film (4a) in the first trench. The second gate electrode (5b) is provided via a second gate insulating film (4b) in the second trench.