Incorporation of MoS 2 nanoflakes into poly(3-hexylthiophene)/n-type Si devices to improve the rectification behavior and optoelectronic performance

This study determines the effect of incorporating MoS2 nanoflakes into poly(3-hexylthiophene) (P3HT) on the electrical conduction mechanisms using the rectification current–voltage characteristics of P3HT/n-type Si devices. It is shown that the forward-voltage current for P3HT/n-type Si devices is limited by the combined effect of thermionic emission and space-charge-limited current conduction. However, carrier transport for P3HT:MoS2/n-type Si devices in the forward-voltage region is almost dominated by thermionic emission. Incorporation of MoS2 nanoflakes into P3HT modifies the P3HT-Si interface and the values for the carrier mobility in the P3HT layer and the external quantum efficiency of the P3HT/n-type Si devices are significantly increased, which improves the rectification and optoelectronic performance of P3HT:MoS2/n-type Si devices.