A 950 MHz rectifier circuit for sensor networks with 10 m-distance

A high-sensitivity rectifier is fabricated in a 0.3 /spl mu/m CMOS technology. The circuit can rectify an RF signal less than the NMOS threshold voltage by using a bias voltage between the gate and the drain terminals of a transistor. The IC achieves a 950 MHz signal rectification over -14 dBm corresponding to 10 m-distance communication and recharges a 1.2 V secondary battery.