High current ion implanter aimed at clean and dust-free production

Abstract A new high current, high throughput ion implanter, ULVAC Model IMH-2200, has been developed based on a new design concept. The IMH-2200 has a small floor area (8.2 m 2 ) and a total weight of ∼ 7.2 t. And yet it has a high implantation capability: 12.5 mA As + beam at 200 keV. Computer aided design has been carried out throughout ion beam optics. The mass analysed ion beam is bent by 25° upwards by a compact deflection magnet and then postaccelerated to the rotating wafer disk which is inclined about 25°. A high throughput end station adopts the cassette to cassette load lock system. A specially designed linear pulse motor for wafer transport in vacuum reduces wafer damages and contributes to a high level of throughput. Complete cryopumping is capable of oil-free clean implantations. The new design principle has enabled us to realize a system free from dust particles and organic vapor contaminations.