Mode-Locked Lasers with “Thin” Quantum Wells in 1.55 μm Spectral Range
2018
We present the results of an experimental study of two-section semiconductor lasers with active region consisting of three 3.1 nm InGaAs/InGaAlAs quantum wells. Passive mode-locking regime with a repetition rate of 10 GHz is realized. Different approaches have been compared to determine the stability of pulse repetition.
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