PRESSURE DEPENDENCE OF RAMAN-ACTIVE MODE FREQUENCIES IN SULVANITE Cu3NbS4 TERNARY COMPOUND

Pressure dependence of Raman-active mode frequencies and linewidths in Cu 3NbS 4 ternary compound has been investigated up to 30 Kb (at room temperature) using focalized micro-Raman technique in a diamond anvil high pressure cell. Seven Raman-active modes frequencies were clearly observed in the pressure range studied and the variation of their respective Raman shift frequency as a function of pressure were given. A structural phase transition at 25 ± 5 Kb previously reported in literature was confirmed.