High Power, High Speed, Single-Mode Wafer-Bonded AlInGaAs-Based LW-VCSELs at 70oC

2006 
We present wafer-bonded LW-VCSELs between 1300 and 1330 nm demonstrating 2.5 mW single-mode output power at 20C and 1.7 mW at 70C. We show small signal 3-dB bandwidths greater than 10 GHz and 8 GHz at 20C and 70C respectively.
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