BSCCO/Sapphire Grown by Plasma-Enhanced Halide CVD

We grew Bi-Sr-Ca-Cu-O (BSCCO) superconducting film on a (1\(\overline 1\)02) sapphire substrate using plasma-enhanced halide CVD at 580°C. The (2212)-phase was dominant in the film. The c axis of the film was perpendicular to the sapphire (1\(\overline 1\)02) plane. The film started a resistive transition at 110 K and showed zero resistivity at about 70 K. The critical current density of the film was 2 x 106 A/cm2 at 10 K. These results are almost the same as for BSCCO films on (001) MgO substrates (6 x 106A/cm2 at 10 K) grown by the same type of CVD.