Depth profiling of phosphorus using resonances in the 31P(α, p)34S reaction

Abstract Several resonances in the 31 P α , p 34 S reaction were investigated for their use in depth-profiling 31 P in solids. Targets with uniform 31 P concentrations as well as those containing Gaussian depth distributions resulting from implantation at 30 and 200 keV were measured using a resonance at 3640 keV. Computer simulation of yield curves was used to treat cases where more than one resonance contributed.