Resistive switching in ZnO/ZnO:In nanocomposite

A lot of effort nowadays is put into development of new approaches to processing and storage of information in integrated circuits due to limitations in miniaturisation. Our research is dedicated to one of actively developed concepts – oxide based resistive memory devices. A material that draws interest due to its promising technological properties is ZnO but pure ZnO lacks in performance in comparison with some other transition metal oxides. Thus our work is focused on improvement of resistive switching parameters in ZnO films by creation of complex nanocomposites. In this work we report characterisation of a nanocomposite based on PLD grown ZnO films with inclusions of In. Such solution allows us to achieve improvements of main parameters that are critical for ReRAM device: RHRS/RLRS ratio, endurance and retention.