Resistive switching transition induced by a voltage pulse in a Pt/NiO/Pt structure
2010
We have observed a switching transition between bistable memory switching and monostable threshold switching in Pt/NiO/Pt structure. Bistable memory switching could be changed to monostable threshold switching by applying a positive electrical pulse with height of 2 V and width between 10−2 and 10−4 s. The change is reversible by applying a negative electrical pulse with the same height and width. By considering polarity- and width-dependence of the switching transition and compositional difference on electrical properties in NiOx, we have proposed a model in which the migration of oxygen ions (O2−) is responsible for the switching transition in Pt/NiO/Pt structures.
Keywords:
- Transition metal
- Bistability
- Ion
- Metal-insulator-metal
- Nuclear magnetic resonance
- Voltage
- Analytical chemistry
- Electrical resistivity and conductivity
- Physics
- Resistive touchscreen
- Pulse (signal processing)
- Non-blocking I/O
- Multivibrator
- resistive switching
- voltage pulse
- Optoelectronics
- Platinum
- compositional difference
- Correction
- Source
- Cite
- Save
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