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Bipolar resistive switching in memristors based on Ge/Si(001) epitaxial layers
Bipolar resistive switching in memristors based on Ge/Si(001) epitaxial layers
2020
O. Gorshkov
D Filatov
S. Koveshnikov
M Shenina
O Soltanovich
V Shengurov
S. Denisov
V Chalkov
I Antonov
D. Pavlov
V. Vorontsov
A. Kruglov
E. Yakimov
Keywords:
resistive switching
Epitaxy
Optoelectronics
Memristor
Materials science
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