A Schottky source and drain double gate structure mosfet threshold voltage Analytical Model

The invention belongs to the technical field of semiconductors and particularly discloses a metal-oxide-semiconductor field effect transistor (MOSFET) threshold voltage model with a double-grid structure. The potential distribution of the MOSFET with the Schottky source and drain double-grid structure is solved, and according to a threshold voltage defining method, when voltage applied to the grids reaches the voltage value obtained when the lowest point of a conduction band on a silicon surface is coincide with the Fermi level of silicon, a threshold voltage analytic model is obtained. The threshold voltage analytic model has a simple form and is clear in physical conception, and provides a quick tool for researching a novel device with the Schottky source and drain double-grid structureby circuit stimulation software.