Be incorporation in heavily doped molecular beam epitaxy grown GaAs: Evidence of nonradiative behavior by cathodoluminescence and electron acoustic measurements

Cathodoluminescence and electroacoustic detection have been used for the characterization of Be‐doped GaAs epilayers grown by molecular beam epitaxy for the doping levels greater than 6.5×1017 at. cm−3. The Be concentration dependence of cathodoluminescence intensity as well as electron acoustic intensity shows the presence of nonradiative centers for concentrations greater than 1018 at. cm−3. Besides, extended defects and doping striations are revealed by electron acoustic images for heavily Be‐doped GaAs (1020 at. cm−3).