Zinc‐stimulated outdiffusion of iron in InP

High‐resistivity InP (108 Ω cm) can be grown by means of metal organic vapor phase epitaxy using ferrocene as a dopant source. Adjacent zinc‐doped layers of InP annihilate the resistivity of the (intentionally) iron‐doped InP. The presence of Zn dramatically enhances outdiffusion of iron out off intentionally iron‐doped layers of InP into the Zn‐doped InP. Diffusion of Zn into the iron‐doped InP is also observed.