Magnetic transitions with inset layers and magnetic memory using the magnetic transitions

Disclosed is a method and system for providing a magnetic transition (150) for use in a magnetic device described. The magnetic transition (150) comprising a reference layer (156), a nonmagnetic spacer layer (158) and a free layer (160). The nonmagnetic spacer layer (158) is located between the reference layer (156) and the free layer (160). The magnetic transition (150) is configured such that the free layer (160) is switchable between a plurality of stable magnetic states when a write current through the magnetic transition (150) is passed. A portion of the magnetic transition (150) comprises at least one magnetic sub-structure (100). The magnetic sub-structure (100) comprises at least one Fe-layer (102) and at least one non-magnetic insertion layer (104). The at least one Fe-layer (102) at least shares a boundary surface with the at least one non-magnetic insertion layer (104). Each of the at least one non-magnetic insertion layer (104) consists of at least one of W, I, Hf, Bi, Zn, Mo, Ag, Cd, Os and / or In.