Monte Carlo calculation of low‐energy electron emission from surfaces

Monte Carlo calculations were carried out to estimate the spatial distribution of low‐energy secondary and backscattered electrons emitted from Si bombarded by low‐energy (<4 keV) electron beams. The calculation includes Mott scattering cross sections for elastic scattering, experimental and calculated electron inelastic mean free paths, the Streitwolf excitation function for production of secondary electrons, a simple cascade for transport of secondaries, and a surface refraction condition for emission. The spatial distribution of emitted secondary electrons was observed to be directly related to that of backscattered electrons in peripheral areas. The role of low‐energy electron emission in the efficiency and resolution of direct write electron beam processes is discussed and results of the calculation are presented.