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Unpassivated AIGaN/GaN HEMTs 'with CW power density of 3.2 W/mm at 25 GHz grown by plasma-assisted MBE
Unpassivated AIGaN/GaN HEMTs 'with CW power density of 3.2 W/mm at 25 GHz grown by plasma-assisted MBE
2003
C.W. Yang
Y. K. Fang
S. F. Chen
M.F. Wang
T. H. Hou
Y.-M. Lin
L.G. Yao
S. C. ChenandM
S. Liang
C Hobbs
Keywords:
Plasma
Analytical chemistry
Power density
Materials science
Optoelectronics
Correction
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