Characterization of 2.5-inch diameter bulk GaN grown from melt-solution

V. Soukhoveev,Vladimir Ivantsov,Yu. Melnik,Albert V. Davydov,Denis V. Tsvetkov,K. Tsvetkova,Irina P. Nikitina,A.S. Zubrilov,A Lavrentiev,Vladimir A. Dmitriev

Characterization of 2.5-inch diameter bulk GaN grown from melt-solution

2001

V. Soukhoveev
Vladimir Ivantsov
Yu. Melnik
Albert V. Davydov
Denis V. Tsvetkov
K. Tsvetkova
Irina P. Nikitina
A.S. Zubrilov
A Lavrentiev
Vladimir A. Dmitriev

GaN bulk crystals up to 2.5-inch diameter were grown from melt-solution. Properties of these crystals were investigated using Auger electron spectroscopy, X-ray diffraction and photoluminescence.

Keywords:

Diffraction
Crystal
Materials science
Analytical chemistry
Photoluminescence
semiconductor materials
Auger electron spectroscopy
bulk crystal

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