A 60GHz-BAND ULTRA LOW NOISE PLANER-DOPED HEMT

An ultra low noise AlGaAsbnGaAs HEMT with a 0.15pm T-shaped gate and Si planer-doped layer has been developed for millimeter-wave systems. The HEMT showed the extremely reduced minimum noise figure of 1.6dB and high associated gain of 6.5dB at 6OGHz. The noise figure is the lowest value ever reported for the AlGaAsDnGaAs pseudomorphic HEMT.