Analysis of memristor-like behaviors in Au/Ti 52 Cu 48 Ox/TiAlV structure with gradient elements distribution

Abstract In the paper memristive-like properties are discussed for the thin film of semiconducting (Ti x Cu 1-x )-oxide system with gradient elements distribution. The test structure was prepared using multimagnetron co-sputtering process with separate Ti and Cu targets. Based on optical and work function measurements, a discussion about the band-gap alignment of the prepared thin film with respect to the used Au and TiAlV electrical contacts has been presented. Additionally memristive properties were analyzed using ion drift model. Performed theoretical analyses together with electrical and structural investigations allowed to propose an explanation of presence of pinched hysteresis loops observed during direct and alternating current measurements.