Pseudomorphic GeSn/Ge Multiple-Quantum-Well on Silicon for Photo Detection and Modulation at 2 μm Wavelength Range

Pseudomorphic GeSn/Ge multiple-quantum-well p-i-n photodiodes were studied at 2 μm range. Direct current and radio frequency measurements were performed to investigate the electrical and optical property of GeSn/Ge MQWs for photo detection and electro-absorption modulation.