A New a-Si TFT with A1203/SiN Double-Layered Gate Insulator for 10.4-inch Diagonal Multicolor Display

A new a-Si TFT(Thin Film '&insistor) with an A1 gate electrode and an A1 0 / SiN double-layered gate insulater has been developed, and this TFT has been successfully applied to the 10.4-inch diagonal multicolor display panel. A1 is a low resistivity metal and it is also possible to form Alz O3 by anodic oxidation. These features contribute greatly to decreasing the number of defects in the panel and are indispensable for manufacturing large -size display. The Al. which is used as a gate electrode, can also be used as a gate bus-line metal. As a result, the gate bus -line resistance of the panel can be reduced to about 2 KQ and this is quite effective to improve the image quality of the panel.