Growth of InZnP/ZnS Core/Shell Quantum Dots with Wide-range and Refined Tunable Photoluminescence Wavelength

Owing to their environmental-friend characteristic, InP-based quantum dots (QDs) showed great potential in various fields as an alternative to Cd-based QDs. However, the current mainstream synthesis method, (TMS)3P-based injection method, still faces many challenges, such as high cost of (TMS)3P and complex temperature control. In contrast, solvent-thermal method is considered to be more feasible and reproducible. Despite its potential advantages, little has been done to understand how the precursors influence the synthesis of InP QDs using the solvent-thermal method. In this research, InZnP/ZnS QDs are synthesized with usage of practical phosphorus precursors (DEA)3P or (DMA)3P. Through the feasible regulation of zinc, indium, phosphorus and sulfur precursors, the band gap of the QDs can be widely and accurately tuned, and a much wider photoluminescence wavelength ranging from 484 nm to 651 nm can be achieved. Furthermore, InI3 and InBr3 contribute to the blue-shift of PL wavelengths, and the combination of (DEA)3P, (DMA)3P, n-DDT and t-DDT refine the PL wavelength with a small tuning gap of 5 nm.