GaN FEA diode with integrated anode

GaN field emission pyramids are grown by a self-limiting, selective-area metalorganic chemical vapor deposition (MOCVD). Thc self limitation ensures high uniformity of the resulting pyramids and the selective-area growth allows one to define regular arrays of GaN pyramids ,for FEAs. Fabrication of an integrated anode lowered the operating voltage of the FEAs by narrowing the anode-cathode distance compared to devices with an external anode. A maximum emission current qf 0.15 @/tip has been observed for voltages of 570 V with an emitter-anode separation of 2 pm.