Determination of optical constants of ZnO growth by PECVD Method.

Plasma enhanced chemical vapor deposition (PECVD) is well-known for deposition of high quality nanostructures at low temperature. In this work, we have deposited the ZnO thin film on the Si substrate using PECVD without growing any seed layer. Zinc acetate is used as precursor material along with oxygen gas. The formation of ZnO film was confirmed with compositional analysis using energy dispersive x-ray spectroscopy (EDX). The ZnO growth in the preferential axis perpendicular to the substrate can be seen in 3D SEM image. The band gap of film is found to be 3.30 eV from the reflectance spectra. The optical parameter of the film deposited were calculated. Finally the dispersion behaviour of the film was investigated using the single oscillator model and was found that the ZnO film obeys the single oscillator model.