Method for depositing film containing boron and nitrogen

PURPOSE: To deposit films contg. B and N on a substrate by subjecting the compds. of general formulas I, II, III to plasma decomposition. CONSTITUTION: The compds. of the general formula I, II or III are used. The compds. of the general formula (I) where R 1 , R 2 and/or R 3 may be the same or different and denote 1 to 12 C straight chain or branched chain alkyl groups, advantageously 1 to 5 C straight chain or branched chain alkyl groups, more particularly methyl, ethyl, n-propyl, i-propyl, n-butyl, i-butyl or t-butyl are used. The compds. of the general formula (I) which may be converted to a gaseous phase under an atm. pressure or reduced pressure at the max. temp. 150°C are used. The films contg. the metals, B, N and, in some cases, C are obtained on the material if the materials to be coated are subjected as cathode to plasma cracking in the presence of gases contg. a halogen. COPYRIGHT: (C)1993,JPO