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Low Vt Ni-FUSI CMOS Technology using a DyO cap layer with either single or dual Ni-phases
Low Vt Ni-FUSI CMOS Technology using a DyO cap layer with either single or dual Ni-phases
2007
H.-Y. Yu
Shou-Zen Chang
Anabela Veloso
Anne Lauwers
Christoph Adelmann
B. Onsia
Sven Van Elshocht
R. Singanamalla
Marc Demand
Rein Vos
Thomas Kauerauf
Stephan Brus
Xinping Shi
Stefan Kubicek
Christa Vrancken
R. Mitsuhashi
P. Lehnen
Jorge Kittl
M. Niwa
K.-M. Yin
Thomas Hoffmann
S. DeGendt
Malgorzata Jurczak
Philippe Absil
Serge Biesemans
Keywords:
CMOS
Optoelectronics
Materials science
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