Stripe patterns formed by the thermal desorption of Ga atoms on Ga‐terminated Si(111) surfaces

The Si(111)‐7×7 area surrounded by the Si(111)‐√3×√3R30°‐Ga region has been observed by scanning tunneling microscopy during the thermal desorption of Ga atoms at ∼600 °C and after the desorption. The 7×7 area exhibits triangular and strip patterns on the nanometer scale for the Si(111) substrates tilting toward the [112] and [112] directions, respectively. This is because faulted halves of the 7×7 reconstruction are adjacent to the √3×√3‐Ga area on the boundary between the 7×7 and √3×√3‐Ga areas during Ga desorption. It has been found that strip patterns with nanometer‐scale precision are formed on the Si(111) substrates tilting toward the [112] direction.