Modeling of graphene/SiO2/Si(n) based metal-insulator-semiconductor solar cells

In this work a graphene based MIS structure for solar energy conversion has been modeled and analyzed. The MIS structure is formed by inserting an oxide layer in the conventional graphene/n-Si Schottky structure to obtain improved performance. Simulation of the model for this MIS structure shows this performance improvement. Using the simulation results this work also analyzes the effects of semiconductor layer width and semiconductor doping level on the current-voltage characteristics.