Low-Voltage, Flexible InGaZnO Thin-Film Transistors Gated With Solution-Processed, Ultra-Thin Al x O y

Indium–gallium–zinc-oxide thin-film transistors gated with solution-processed, ultra-thin Al x O y have been fabricated on a plastic substrate. The effects of bending on the gate dielectric in terms of leakage current density and capacitance density have been studied. The devices show a low operating voltage of less than 1 V, a high current on/off ratio >10 5 , and a low subthreshold swing <90 mV/decade. The devices maintain their high performance even when flexed to a curvature radius of 11 mm. As a result, such devices possess a great potential for low-power, flexible electronics.