IRRADIATION EFFECTS OF O2 CLUSTER IONS FOR LEAD OXIDE FILM FORMATION

Abstract O 2 cluster ions were directed onto Si substrates, covered with SiO 2 , during the evaporation of Pb. By increasing the acceleration voltage, the irradiation of O 2 cluster ions enhanced the oxidation, crystallization and surface smoothing of the polycrystalline lead oxide films. They were preferentially oriented in the (111) direction at acceleration voltages above 5 kV. A significant smoothing effect was observed even if the acceleration voltage was as low as 1 kV. A surface roughness of 9 A was obtained at 7 kV.