Low-Temperature Deposition of CuIn(SxSe1-x)2 Thin Films by Ionized Cluster Beam Technique

CuIn(SxSe1-x)2 thin films were prepared on Mo-coated soda-lime glass substrates by the ionized cluster beam (ICB) technique, in which Cu, In2S3 and Se vapors were ionized and accelerated. The substrate temperature was kept at Ts=400°C. The films were characterized using X-ray diffraction (XRD), a scanning electron microscope (SEM), and an electron-probe microanalyzer (EPMA). It was found that polycrystalline films with improved grain size were obtained when the substrate temperature exceeded 250°C. Using the ICB technique, thin film solar cell devices based on these CuIn(SxSe1-x)2 films were fabricated. The photovoltaic effect was confirmed in substrate-type structure solar cells with the low-temperature deposition of ICB-grown CuIn(SxSe1-x)2 thin films.