Deuterium implantation in carbon at elevated temperatures

Abstract Retention of deuterium implanted into carbon substrates at varying temperatures (25–1000°C) and ion energies (2–20 keV) has been determined. Comparison with isochronal annealing of implanted substrates shows that for medium temperatures, both ion induced detrapping and thermal desorption act together in the release process. Effective detrapping cross sections are presented for different energies and temperatures. Good agreement with measured saturation curves can be obtained with a simple exponential expression, in which the effective detrapping cross section is the only free parameter.